Gate-controlled magnetoresistance of a paramagnetic-insulator|platinum interface

Magnetoresistance in paramagnetic heavy fermion metals.

A theoretical study of magnetic field (h) effects on single-particle spectra and the transport quantities of heavy fermion metals in the paramagnetic phase is carried out. We have employed a non-perturbative local moment approach (LMA) to the asymmetric periodic Anderson model within the dynamical mean field framework. The lattice coherence scale ω(L), which is proportional within the LMA to th...

Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure

In the present paper, we show tungsten diselenide (WSe2) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe2 flake are adjusted, using buried triple-gate substrates with three independently controllable gates. The device characteristics found in the tu...

Gate control and amplification of magnetoresistance in a three-terminal device

Effects of resonant interface states on tunneling magnetoresistance

Based on model and ab initio calculations we discuss the effect of resonant interface states on the conductance of epitaxial tunnel junctions. In particular we show that the ‘‘hot spots’’ found by several groups in ab initio calculations of symmetrical barriers of the ki-resolved conductance can be explained by the formation of bonding and antibonding hybrids between the interface states on bot...

Gate-Controlled Punch Through Transistor

Operation of the gate-controlled punch through transistor is demonstrated in this paper. The characteristics of the device are simulated using SILVACO atlas device simulator. This device shows high voltage, high operation frequency, and low noise properties. This punch through device can be used in high power control circuit, and also can be used for fast analog circuits for multiplication, squ...